MF161900 - SEMI MF1619 - Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle Revision:SEMI MF1619-1107 (Reapproved 1023) - Current This Standard specifies the protocol

This Standard specifies the protocol and services that compliant intelligent devices shall support to exchange information over the SafetyBUS p semiconductor equipment sensor/actuator network

SEMI F39-1223 (complete rewrite)

This Test Method addresses calculating and reporting SSIS CR from measurements of either PSL depositions or other LLSs on wafers in LSE units

The term ‘perceptual’ is subject to CIE 248 (CIECAM16

1　cm-1 required at 77 K

MF161900 - SEMI MF1619 - Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle Revision:SEMI MF1619-1107 (Reapproved 1023) - Current This Standard specifies the protocolThis Test Method covers determination of the absorption coefficient due to the interstitial oxygen content of commercial monocrystalline silicon wafers by means of Fourier transform infrared (FT IR) spectroscopy. In this Test Method, the incident radiation is p polarized and incident on the test specimen at the Brewster angle in order to minimize multiple reflections. Since the interstitial oxygen concentration is proportional to the absorption